| PART |
Description |
Maker |
| LH5420-P-35 LH5420-P-30 LH5420-P-25 |
256 x 36 x 2 Bidirectional FIFO 256 × 36 × 2双向先进先出
|
Sharp Corporation
Sharp, Corp.
|
| IDT72V8980 IDT72V8980DB IDT72V8980J IDT72V8980PV I |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
| AD5201 AD5207 AD5207BRU100-REEL7 AD5207BRU10-REEL7 |
Dual, 256 Position, Digital Potentiometer
2-Channel/ 256-Position Digital Potentiometer
CONNECTOR ASSEMBLIES RoHS Compliant: Yes
2-Channel, 256-Position Digital Potentiometer DUAL 100K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO14
2-Channel, 256-Position Digital Potentiometer 2通道56位数字电位器
|
AD[Analog Devices]
Analog Devices, Inc.
|
| MT89L80 |
256 x 256 Channels (8 TDM Streams at 2.048 Mbps) 3.3 V Non-blocking Digital Switch (DX)
|
Zarlink Semiconductor
|
| SA3488 |
CMOS 256 X 256 DIGITAL SWITCHING MATRIX
|
SAMES[Sames]
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| CT50E CT35E CT130E CT120E CT200E CT110E |
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|58V V(BO) MAX|50UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|40V V(BO) MAX|50UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|138V V(BO) MAX|25UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|125V V(BO) MAX|25UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|215V V(BO) MAX|15UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|118V V(BO) MAX|25UA I(S)|DO-204AL 移民部（双向二极管晶闸管）| 118V五（公报）最大| 25UA我（县）|的DO - 204AL
|
NJR
|
| P4C422-25DC P4C422-25DMB P4C422-12FC P4C422-15FC P |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 12 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 15 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, PDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| AD5262-EVAL AD5260 AD5262BRU20-REEL7 AD5262BRU200- |
15 V or ±5 V, Dual-Channel, SPI Compatible, 256 Position Digital Potentiometer
15 V or V, Dual-Channel, SPI Compatible, 256 Position Digital Potentiometer
15 V or V, Single-Channel, SPI Compatible, 256 Position Digital Potentiometer
32-Tap. Nonvolatile. Linear-Taper Digital Potentiometers in SOT23 20K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO14
|
ANALOG DEVICES INC
Analog Devices, Inc.
|
| 63S280NXXXX 63S281ANXXXX 63S281ALXXXX 53S281AJ883B |
256 X 8 OTPROM, 45 ns, PDIP20
256 X 8 OTPROM, 28 ns, PDIP20
256 X 8 OTPROM, 28 ns, MQCC20
256 X 8 OTPROM, 40 ns, CDIP20
|
MONOLITHIC MEMORIES
|
| DS2430AV DS2430AP DS2430AT DS2430AX |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
256-Bit 1-Wire EEPROM
|
Toshiba, Corp.
Dallas Semiconducotr
Dallas Semiconductor
|
